with leading institutions such as Palo AltoResearch Center (PARC) for external validation of its semi-polar GaN. LED on SP GaN vs. c-plane GaN (PARC) LED: Semi-polar vs. c-plane MQW... semi-polar LED structure was grown side-by-side with a c-plane LED structure in the same MOCVD run. Longer peak wavelength. The same indium incorporation produced a semi-polar LED... with a peak wavelength that was ~25 nm longer than its c-plane counterpart. 2 emission intensity. The semi-polar LED achieved more than double the emission intensity of the c-plane...

LEDs grown on Ostendo's... Ostendo Technologies, Inc. Home About GaN Careers Contact Us LEDs grown on Ostendo's semi-polar GaN achieve 2.5x the brightness of c-plane GaN based... LEDs Carlsbad, CA & Oxfordshire, U.K.December 16, 2010Ostendo Technologies, Inc. (Ostendo) and Technologies and Devices International, Inc. (TDI), part of the Oxford Instruments Group..., are pleased to announce that LED structures grown on their semi-polar (11-22) GaN wafers have resulted in more than 2.5x the emission intensity of the c-plane GaN based LED...

technology make it viable for a variety of applications; namely, Ultra High Brightness (UHB) Light Emitting Diodes (LED), Laser Diodes (LD), and Power Electronic (high-power and high... for the use of GaN for the SSL applications like UHB-LEDs is dependent on improving the Internal Quantum Efficiency (IQE) of the device. Crystal orientation of the GaN substrate plays..., high-brightness, and low cost SSL solutions. The first obstacle is the "droop", which is the subsequent leveling off or drop of LED efficiencies as the operating current increases...

the availability of Semi-Polar GaN wafers for LED & LD device makers Copyright 2013 Ostendo Technologies, Inc. All rights reserved. ...

Cells in the commercial and government markets. The unique aspects of GaN allow potential customers to create higher efficiency Light Emitting Diode (LED) and Laser Diode (LD...