in 4H-SiC Schottky Rectifiers Currently SiC-based PN and Schottky junctions are still suffering fundamental device problems which can be briefed as forward-voltage degradation... and Schottky barrier height (SBH) inhomogeneities respectively. SiC Schottky diodes with inhomogeneous barriers usually have excess reverse leakage current and excess forward current... inhomogeneities. MaxMile Technologies has recently demonstrated a method which can be used to control the Schottky barrier inhomogeneities in SiC material. The experimental results indicated...

Publications FAQ Journal Inhomogeneities in Ni/4H-SiC Schottky barriers: Localized Fermi-level pinning by defect states , Journal of Applied Physics, Vol.101, 2007: 114514... Structure in Silicon Carbide, Material Science and Engineering B, Vol. 129, 2006: 216-221. Investigation on Barrier Inhomogeneities in 4H-SiC Schottky Rectifiers, physica status solidi... (a), Vol.203, 2006: 643-650. Defect Driven Inhomogeneities in Ni/4H-SiC Schottky Barriers, Applied Physics Letters, Vol.87, 2005: 242106. Investigation on small growth pits in 4H...

nondestructive EL mapping systems for unprocessed LED epiwafers 2006/01/26: MaxMile Technologies demonstrated a method to control the barrier inhomogeneities in 4H-SiC Schottky Rectifiers...