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Website Snapshot of LAWRENCE SEMICONDUCTOR RESEARCH LABORATORY, INC.

LAWRENCE SEMICONDUCTOR RESEARCH LABORATORY, INC.

(602) 438-2300

2300 W Huntington Dr, Tempe, Arizona   852823130 , USA

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Products & Services:

  • Epitaxial Wafers
  • Soi Epitaxy
  • Sige
  • Sigec
  • Soi
  • Sos
  • Epitaxy
  • Compound Semiconductor
  • Gaas
  • Wafers
  • Gallium
  • Gallium Arsenide
  • Semiconductor Wafer
  • Epiworks
  • Gaas Wafers
  • Epi
  • Gaas-based
  • Inp-based
  • Optoelectronic
  • Custom Epiwafer
  • Custom Epitaxial Wafer
  • Epiwafer Foundry
  • Epitaxial Foundry
  • Indium Phosphide
  • Photoluminescence
  • Resistance Mapping
  • Photoreflectance
  • Semiconductors
  • Device Technology
  • Chip Technology
  • Microchip Technology
  • Microchip Manufacturer
  • Chip Manufacturer
  • Heterojuncture Bipolar Transistors
  • Hbt
  • Mocvd
  • Chip Manufacturing
  • Chip Materials
  • Microchip Materials
  • Bipolar Transistors
  • Epi Wafers
  • Inp Wafers
  • Electrochemical C-v Profiling
  • Reflectance Difference Spectroscopy
  • Profilometry
  • Knee Voltage
  • Microchip
  • Materials Technology
  • Optoelectronic
  • Arsenide
  • Heterojuncture
  • Bipolar
  • Transistors
  • Fiber-optics
  • Inp
  • Based
  • Indium
  • Phosphide
  • Device
  • Technology
  • Chip
  • Fiber
  • Optics
  • Electrochemical
  • Reflectance
  • Spectroscopy
  • C-v Profiling
  • Electrochemical Profiling
  • Reflectance Spectroscopy
  • Difference Spectroscopy Epiwafer
  • Movpe
  • Mbe
  • Wafer
  • Compound Semiconductor
  • Optoelectronic
  • Electronic
  • Merchant Supplier
  • Custom Epiwafer
  • Epiwafer Foundry
  • Epi
  • Qed
  • Mocvd
  • Iii-v
  • Iqe
  • International Quantum Epitaxy
  • Epitaxial Products International
  • Quantum Epitaxial Designs Cvd
  • Chemical Vapor Deposition
  • Semiconductor Equipment
  • Bulk Growth
  • Epitaxy
  • Silicon
  • Germanium
  • Si
  • Ge
  • Sige
  • Sigec
  • Sos
  • Soi
  • Etchstop Layers
  • Selective Epitaxy
  • Silicon Epitaxy
  • Silicon Germanium
  • Silicon Germaniaum Carbon
  • Silicon On Insulator
  • Selective Etch
  • Silicon On Sapphire
  • Specialty Epitaxy

Web Site Results

is a suggested list to help guide discussions. individual layer thickness and how you want to define that thickness required thickness uniformity (wafer to wafer, within wafer... with patterned wafers) wafer diameter pattern distortion and washout On the epi structure: Required thickness/composition uniformity Epi (poly) surface roughness requirement Ge...
.). Fast turnaround and high yields are standard. A majority of our high volume production is on 200 mm and 150 mm wafer diameters. We have 13 ASM Epsilon One 2000 reactors. Volume... production for typical buried layer epitaxy exceeds 700 wafers per week, per reactor The following are typical statistical process control charts on current production specifications. [Back] Copyright 2007 LSRL All rights reserved ...
Product 3 Home> EPI Services > SOI SIMOX SOI Summary data SIMOX SOI Thickness target and corresponding uniformity information for 100 mm, 150 mm and 200 mm diameter wafers The...
better than 4 % thickness uniformity within wafer and wafer to wafer. Composition within SIMS detection limits Minimal oxygen content is standard for all processes, < 1E18 cm-3...

Company Profile:

Contact: 602-438-2300
Address: 2300 W Huntington Dr
Tempe, Arizona   852823130 , USA
Url: http://www.lsrl.com
Fax: 602-438-9591
   
Annual Sales: US$2.5 Million - US$5 Million
Business Type: Manufacturer
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